Qionghua Zhai received the M.Sc. degree in School of Instrument and Electronics from the North University of China in 2016. After graduation, she joined the Institute of Microelectronics, Chinese Academy of Sciences. Her research area is design and process of silicon-based X-ray radiation detectors. She joined Shanghai HIgh repetition rate XFEL aNd Extreme light facility (SHINE) in 2022, mainly engaged in the research and development of area array detectors.
